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HSD12

Unidirectional TVS Diodes

FEATURES  IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power per (tp=8/20μs)  Protects one I/O line (unidirectional)  Low clamping voltage  Working voltages: 3.3V to 36V  Low leakage current

文件:1.43785 Mbytes 页数:4 Pages

HUIXIN

慧芯电子

HSD12C

Bidirectional TVS Diodes

FEATURES  IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power per (tp=8/20μs)  Protects one I/O line (bidirectional)  Low clamping voltage  Working voltages : 3V,5V,8V,12V,15V,18V,20V,24V,36V  Low leakage current

文件:868.58 Kbytes 页数:4 Pages

HUIXIN

慧芯电子

HSD12FDT

Transient Voltage Suppressor

FEATURES  Transient protection for high-speed data lines IEC 61000-4-2 (ESD) ±30kV (Air) ±30kV (Contact)  Peak power dissipation: 2275W (8/20μs)  Working voltages : 12V  Ultra-small package (1.6mm1.0mm0.5mm)  Solid-state silicon technology  Low clamping voltage

文件:656.43 Kbytes 页数:4 Pages

HUIXIN

慧芯电子

HSD12VHHU

Single Line Uni-directional Transient Voltage Suppressor

FEATURES  Transient protection for high-speed data lines IEC 61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  Peak power dissipation: 5760W (8/20μs)  Working voltages : 12V  Low leakage current  Low clamping voltage  Ultra-small package (2.0mm×2.0mm×0.5mm)  Solid-state silicon-avalanch

文件:485.08 Kbytes 页数:4 Pages

HUIXIN

慧芯电子

HSD128M32B8A

Synchronous DRAM Module 512Mbyte (128Mx32Bit), 8K Ref., 3.3V

文件:586.4 Kbytes 页数:11 Pages

DLGHANBIT

HSD128M32B8A-13

Synchronous DRAM Module 512Mbyte (128Mx32Bit), 8K Ref., 3.3V

文件:586.4 Kbytes 页数:11 Pages

DLGHANBIT

HSD128M72B9K

Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,

文件:207.03 Kbytes 页数:11 Pages

HANBIT

HSD128M72B9K-10

Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,

文件:207.03 Kbytes 页数:11 Pages

HANBIT

HSD128M72B9K-10L

Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,

文件:207.03 Kbytes 页数:11 Pages

HANBIT

HSD128M72B9K-12

Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,

文件:207.03 Kbytes 页数:11 Pages

HANBIT

详细参数

  • 型号:

    HSD12

  • 制造商:

    HANBIT

  • 制造商全称:

    Hanbit Electronics Co.,Ltd

  • 功能描述:

    Synchronous DRAM Module 1024Mbyte(128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,

供应商型号品牌批号封装库存备注价格
HUXN/慧芯
2026+PB
SOD-323
90000
全新Cnnpchip
询价
HANNSTAR
17+
NA
6200
100%原装正品现货
询价
HANNSTAR
24+
65200
询价
HANNSTAR
23+
7300
专注配单,只做原装进口现货
询价
TELEDYNE
专业铁帽
1100
原装铁帽专营,代理渠道量大可订货
询价
TELEDYNE
20+
原装
67500
原装优势主营型号-可开原型号增税票
询价
24+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
询价
BSECOLTD
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SUMY
DIP-2
35560
一级代理 原装正品假一罚十价格优势长期供货
询价
ON/安森美
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
询价
更多HSD12供应商 更新时间2026-4-17 9:41:00