GaAs Beam Lead Schottky Barrier Diodes

Description\nThe HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy (MBE) manufacturing techniques and feature rugged construction and consistent electr • Gold Tri-Metal System For Improved Reliability\n• Low Series Resistance\n• Polyimide Passivation\n• Multiple Configurations;

Agilent

安捷伦

3.1/2 DIGIT SINGLE CHIP A/D CONVERTER

文件：178.56 Kbytes 页数：4 Pages

NJRC

日本无线

3.1/2 DIGIT SINGLE CHIP A/D CONVERTER

文件：178.56 Kbytes 页数：4 Pages

NJRC

日本无线

3.1/2 DIGIT SINGLE CHIP A/D CONVERTER

文件：178.56 Kbytes 页数：4 Pages

NJRC

日本无线