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HSD276A

SiliconSchottkyBarrierDiodeforDetector

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HSD276A

SiliconSchottkyBarrierDiodeforDetector

HitachiHitachi Semiconductor

日立日立公司

HSL276A

SiliconSchottkyBarrierDiodeforDetector

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HSM276AS

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi Semiconductor

日立日立公司

HSM276AS

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HSM276ASR

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HSM276ASR

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi Semiconductor

日立日立公司

HSM276S

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi Semiconductor

日立日立公司

HSM276S

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HSM276S

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●HSM276ASRwhichisinterconnectedinseriesconfiguration isdesignedforbalancedmixeruse. ●MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

详细参数

  • 型号:

    HSC276TRF-E

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    SMALL SIGNAL DIODE - LEAD FREE

  • 功能描述:

    SMALL SIGNAL DIODE - LEAD FREE - Tape and Reel

  • 制造商:

    Renesas Electronics

  • 功能描述:

    Cut Tape

  • 制造商:

    Renesas

供应商型号品牌批号封装库存备注价格
SOD-523
23+
RENESAS
6000
专注配单,只做原装进口现货
询价
SOD-523
23+
RENESAS
6000
专注配单,只做原装进口现货
询价
HITACHI/日立
25+
SOD-523
54558
百分百原装现货 实单必成 欢迎询价
询价
RENESAS瑞萨/HITACHI日立
24+
SOD-5230603
366000
新进库存/原装
询价
HITACHI
24+
原厂封装
999999
原装现货假一罚十
询价
RENESAS
24+
0603
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
RENESAS/瑞萨
23+
SOD-523
24190
原装正品代理渠道价格优势
询价
Bychip/百域芯
21+
SOD523
30000
优势供应 品质保障 可开13点发票
询价
MSV/萌盛微
23+
SOD523
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
22+
SOD-523
18000
原装正品
询价
更多HSC276TRF-E供应商 更新时间2025-7-29 17:10:00