SILICON PNP EPITAXIAL TYPE

Description • Strobo Flash Applications • Medium Power Amplifier Applications Features • High DC Current Gain and Excellenr hFE Linearity • hFE(1)=140-600, (VCE=-1V, IC=-0.5A) • hFE(2)=60 (Min.), 120(Typ.), (VCE=-1V, IC=-4A) • Low Saturation Voltage. • VCE(sat)=-0.5V(Max.), (IC=-2A, IE=-50

文件：34.16 Kbytes 页数：3 Pages

HSMC

华昕

SILICON PNP EPITAXIAL TYPE

Description\n• Strobo Flash • High DC Current Gain and Excellenr hFE Linearity\n• hFE\n=140-600, (VCE=-1V, IC=-0.5A)\n• hFE(2)=60 (Min.), 120(Typ.), (VCE=-1V, IC=-4A)\n• Low Saturation Voltage.\n• VCE(sat)=-0.5V(Max.), (IC=-2A, IE=-50mA);

HSMC

华昕

MDL,SIN,100D,1.414:1,SM,TU

文件：614.12 Kbytes 页数：3 Pages

pulse

MDL,SIN,100D,1.414:1,SMT

文件：302.3 Kbytes 页数：3 Pages

pulse

Thyristor Surge Suppressors

文件：574.58 Kbytes 页数：4 Pages

YINT

音特电子