HS9-4080AEHSLASHPROTO中文资料瑞萨数据手册PDF规格书

厂商型号	HS9-4080AEHSLASHPROTO
功能描述	Radiation Hardened Full Bridge N-Channel FET Driver
文件大小	370.78 Kbytes
页面数量	8 页
生产厂商	RENESAS
中文名称	瑞萨
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-8 18:27:00
人工找货	HS9-4080AEHSLASHPROTO价格和库存，欢迎联系客服免费人工找货

特性 Features

• Electrically screened to SMD # 5962-99617

• QML qualified per MIL-PRF-38535 requirements

• TID Rad Hard Assurance (RHA) testing

- HDR (50 - 300 rad(Si)/s) . . . . . . . . . . . . . 300krad(Si) (max)

- HDR (0.01 rad(Si)/s) . . . . . . . . . . . . . . . . . . . . . . .50krad(Si)

• Latch-up immune RSG DI process

• Drives N-Channel FET full bridge including high-side chop

capability

• Bootstrap supply max voltage to 95VDC

• TTL comparator input levels

• Drives 1000pF load with rise and fall times of 50ns

• User-programmable dead time

• Charge-pump and bootstrap maintain upper bias supplies

• DIS (Disable) pin pulls gates low

• Operates from single supply. . . . . . . . . . . . . . . . . . 12V to 15V

• Low power consumption

• Undervoltage protection