The HS-303CEH is an analog switch and a monolithic device that is fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. It is pinout compatible and functionally equivalent to the HS-303RH. This switch offers low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303CEH can operate with rails of ±15V.

Features

• QML, per MIL-PRF-38535

• No latch-up, dielectrically isolated device islands

• Pinout and functionally compatible with intersil HS-303RH series analog switches

• Analog signal range equal to the supply voltage range

• Low leakage . . . . . . . . . . . . . . . . . . . . . 150nA (max, post-rad)

• Low rON . . . . . . . . . . . . . . . . . . . . . . . . . . . 60Ω (max, post-rad)

• Low standby supply current . . . . . . . ±150µA (max, post-rad)

• Radiation assurance

- High dose rate (50 to 300rad(Si)/s) . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*

• Single event effects

- For LET = 60MeV-mg/cm2 at 60° incident angle, <150pC charge transferred to the output of an off switch

* Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.