HS9-302AEHSLASHPROTO中文资料瑞萨数据手册PDF规格书

▪ Qualified & Screened to DLA SMD 5962-95812

▪ No latch-up, dielectrically isolated device islands

▪ Pin and functionally compatible with Renesas

HS-302RH series analog switches

▪ Analog signal range equal to the supply voltage

range

▪ Low leakage: 150nA (maximum, post-rad)

▪ Low rON: 60Ω (maximum, post-rad)

▪ Low standby supply current: ±150μA (maximum,

post-rad)

▪ TID Rad Hard Assurance (RHA) wafer-by-wafer

testing

• HDR (50rad(Si)/s to 300rad(Si)/s): 100krad(Si)

• LDR (<0.01rad(Si)/s): 50krad(Si)

▪ Single event effects

• SEE for LET = 60MeV·cm2/mg at 60° incident

angle, <150pC charge transferred to the output

of an off switch (based on SOI design

calculations)