HS9-302AEHSLASHPROTO中文资料瑞萨数据手册PDF规格书

特性 Features

• Electrically screened to DLA SMD# 5962-95812

• No latch-up, dielectrically isolated device islands

• Pin and functionally compatible with Renesas

HS-302RH series analog switches

• Analog signal range equal to the supply voltage

range

• Low leakage: 150nA (maximum, post-rad)

• Low rON: 60Ω (maximum, post-rad)

• Low standby supply current: ±150μA (maximum,

post-rad)

• Radiation assurance (Note 1)

○ High dose rate (50 to 300rad(Si)/s): 100krad(Si)

○ Low dose rate (0.01rad(Si)/s): 50krad(Si)

• Single event effects

○ SEE for LET = 60MeV·cm2/mg at 60° incident

angle, <150pC charge transferred to the output of

an off switch (based on SOI design calculations)