HS8424中文资料射频前端芯片数据手册OnMicro规格书

描述 Description

The HS8424 Power Amplifier Module (PAM) is a fully matched, 28-pad surface mount (SMT) module developed for LTE applications. The module includes broadband coverage of FDD LTE Bands 7 and 30, TDD LTE Bands 38/40, and Band 41 in a compact 3.65×4.00x0.95 mm package.
Attaining high efficiencies throughout the entire power range while meeting the stringent linearity requirements of LTE, the HS8424 delivers unsurpassed savings in current consumption for data-intensive applications.
The Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all amplifier active circuitry, including input, interstage, and output matching circuits. Output match into a 50-ohm load is realized off-chip within the module package to optimize efficiency and power performance. Silicon-on-insulator (SOI) switch follows the wideband power amplifier to direct the RF output signal to either a band 7 duplexer or one of three TDD filters supporting bands 38, 40, and 41. Additional throws in the SOI switch allow the reuse of TDD filters in Rx mode by providing paths to either the band 40 Rx port (T/R1) or a shared band 38/41/7 Rx port (T/R2). Bias for the PA MMIC and switch is generated on a CMOS IC controlled through a MIPI RFFE interface.
The HS8424’s Heterojunction Bipolar Transistor (HBT) process which provides for all positive voltage DC supply operation and maintains high efficiency and good linearity. Optimal performance is obtained with VCC1 and VCC2 sourced from a DC-DC power supply based on target output power. No external supply side switch is required as typical \"off\" leakage is a few microamperes.

 

特性 Features

•  High efficiency Broadband
•  MIPI RFFE interface
•  RF I/O internally matched to 50 ohms  
•  Small, low profile package  
   -  3.65×4.00x0.95 mm
   -  28-pad configuration

应用 Application

•  Long-Term Evolution (LTE)
•  Handsets and Data Cards