射频功放前端芯片

\n  \n The HS8298 is a complete CMOS high-power, high-efficiency transmit module for low cost quad-band TX (GSM850/EGSM900/DCS1800/PCS1900)/dual-band RX GSM/GPRS mobile handsets. Power amplifier, Power controller circuit and switch circuit have been integrated in a single CMOS chip. Internal T \nHigh Output Power\n• 34.0dBm at GSM850/EGSM900\n• 31.0dBm at DCS1800/PCS1900\nHigh Power Added Efficiency\n• GSM850 40% PAE \n• EGSM900 40% PAE \n• DCS1800 35% PAE \n• PCS1900 35% PAE \nIntegrated Control and Protection\n ;

OnMicro

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射频功放前端芯片

\n The HS8298H is a complete CMOS high-power, high-efficiency transmit module for low cost quad-band TX (GSM850/EGSM900/DCS1800/PCS1900)/dual-band RX GSM/GPRS mobile handsets. Power amplifier, Power controller circuit and switch circuit have been integrated in a single CMOS chip. Internal TX/RX 5 \nHigh Output Power\n• 34.0dBm at GSM850/EGSM900\n• 31.0dBm at DCS1800/PCS1900\nHigh Power Added Efficiency\n• GSM850 41% PAE \n• EGSM900 41% PAE \n• DCS1800 35% PAE \n• PCS1900 35% PAE \nIntegrated Control and Protection\n ;

OnMicro

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射频功放前端芯片

The HS8298N is a complete CMOS high-power, high-efficiency transmit module for low cost dual-band TX (GSM850/DCS1900)/dual-band RX GSM/GPRS mobile handsets. Power amplifier, Power controller circuit and switch circuit have been integrated in a single CMOS chip. Internal TX/RX 50Ω matching, DC blocki ► High Output Power\n• 34.0dBm(typ.) at GSM850\n• 31.2dBm(typ.) at PCS1900\n• GSM850 43% PAE \n• PCS1900 35% PAE \n► Integrated Control and Protection;

OnMicro

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BEAM POWER TUBE

文件：1.0417 Mbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

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6A, 24V, 600kHz Step-Down Converter with Synchronous Gate Driver

General Description The RT8298 is a synchronous step-down DC/DC converter with an integrated high side internal power MOSFET and a gate driver for a low side external power MOSFET. It can deliver up to 6A output current from a 4.5V to 24V input supply. Features 4.5V to 24V Input Voltage

文件：330.72 Kbytes 页数：18 Pages

RICHTEK

立锜科技