HS8269L中文资料射频功放前端芯片数据手册OnMicro规格书

描述 Description

The HS8269L is a complete CMOS high-power, high-efficiency transmit module for low cost quad-band TX (GSM850/EGSM900/DCS1800/PCS1900)/dual-band RX GSM/GPRS mobile handsets. Power amplifier, Power controller circuit and switch circuit have been integrated in a single CMOS chip. Internal TX/RX 50Ω matching, DC blocking on TX/Ant and harmonic filtering circuits are integrated, and this eliminates the extra need of external components, simplifies layout and reduces board space as well. The advanced front-end module architecture has been designed specifically to use standard CMOS technology to implement high output power at high efficiency over all the operating conditions. No external compensation for temperature, frequency or battery is another advantage to meet RF performance over various conditions. The module is packaged in a small LGA format (7.0mm x6.0mm x0.93mm).
 

Functional Block Diagram

特性 Features

High Output Power
• 34.0dBm at GSM850/EGSM900
• 31.0dBm at DCS1800/PCS1900
High Power Added Efficiency
• GSM850 43% PAE
• EGSM900 43% PAE
• DCS1800 30% PAE
• PCS1900 30% PAE
Integrated Control and Protection
 

应用 Application

• VBATT Operating range 3.0V to 4.5V
• Complete power control solution
• Advanced CMOS process 
• LGA 7.0mm x6.0mm x 0.93mm 
• Quad-band cellular handsets
• Multimode Mobile Handset Applications
• GPRS Class 12 Compliant
• Portable Battery-Powered Equipment
 
Product Description
The HS8269L is a complete CMOS high-power, high-efficiency transmit module for low cost quad-band TX (GSM850/EGSM900/DCS1800/PCS1900)/dual-band RX GSM/GPRS mobile handsets. Power amplifier, Power controller circuit and switch circuit have been integrated in a single CMOS chip. Internal TX/RX 50Ω matching, DC blocking on TX/Ant and harmonic filtering circuits are integrated, and this eliminates the extra need of external components, simplifies layout and reduces board space as well. The advanced front-end module architecture has been designed specifically to use standard CMOS technology to implement high output power at high efficiency over all the operating conditions. No external compensation for temperature, frequency or battery is another advantage to meet RF performance over various conditions. The module is packaged in a small LGA format (7.0mm x6.0mm x0.93mm).