HS817中文资料威世数据手册PDF规格书

FEATURES

• Rated impulse voltage (transient overvoltage)

VIOTM = 6 kVpeak

• Isolation test voltage (partial discharge test

voltage) Vpd = 1.6 kV

• Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

• Rated recurring peak voltage (repetitive)

VIORM = 850 Vpeak

• Creepage current resistance according to IEC 112,

comparative tracking index: CTI  250

• Thickness through insulation  0.4 mm

• Isolation materials according to UL 94 V-O

• Pollution degree 2 (resp. IEC 664)

• Climatic classification 55/100/21 (IEC 68 part 1)

• Low temperature coefficient of CTR

• G = leadform 10.16 mm; provides creepage distance

> 8 mm, suffix letter “G” is not marked on the optocoupler

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• Switch-mode power supplies

• Line receiver

• Computer peripheral interface

• Microprocessor system interface

DESCRIPTION

The HS817 series consists of a phototransistor optically

coupled to a gallium arsenide infrared-emitting diode in a

4-lead plastic dual inline package.