Radiation Hardened 2K x 8 CMOS PROM

Radiation Hardened 2K x 8 CMOS PROM The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design tech

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INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of

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INTERSIL

Radiation Hardened 8kx8 CMOS PROM

The Intersil HS-6664RH is a radiation hardened 64k CMOS PROM, organized in an 8k word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation. Features

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INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

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INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

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INTERSIL

VIA V4 Eden or C7 processor ISA Bus SBC w/CF

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BOSER

宝晟科技

VIA V4 Eden or C7 processor ISA Bus SBC w/CF

文件：88.79 Kbytes 页数：1 Pages

BOSER

宝晟科技

VIA V4 Eden or C7 processor ISA Bus SBC w/CF

文件：88.79 Kbytes 页数：1 Pages

BOSER

宝晟科技

Radiation Hardened 8K x 8 CMOS PROM

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INTERSIL

8k x 8 CMOS PROM

The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation.\nOn-chip addr • Electrically Screened to SMD # 5962-95626 \n• 1.2 Micron Radiation Hardened Bulk CMOS \n• Transient Output Upset >5 x 108 rad(Si)/s \n• Fast Access Time 35ns (Typ) \n• Single Pulse 10V Field Programmable \n• On-Chip Address Latches \n• NiCr Fuses \n• Low Standby Current oC to 125oC;

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