Radiation Hardened Triple Line Transmitter and Receivers

Features • Electrically Screened to SMD # 5962-96722 and 5962-96723 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Hardened DI Processing - Total Dose . . . . . . . . . . . . . . . . . . . . 200 krad(Si) (Max) - Latchup Free - Neutron Fluence . . . . . . . . . . . . . . . . . .5

文件：341.73 Kbytes 页数：8 Pages

RENESAS

瑞萨

Radiation Hardened Triple Line(party-Line) Transmitter

The HS-245RH/246RH/248RH radiation hardened triple line transmitter and triple line receivers are fabricated using the Intersil dielectric isolation process. These parts are identical in pinout and function to the original HD-245/246/248. They are also die size and bond pad placement compatible wi

文件：110.2 Kbytes 页数：8 Pages

INTERSIL

Radiation Hardened Triple Line Transmitter

文件：227.3 Kbytes 页数：8 Pages

INTERSIL

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

文件：25.07 Kbytes 页数：2 Pages

NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.63 Kbytes 页数：5 Pages

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.63 Kbytes 页数：5 Pages

POINN