HRU13N10K说明书PDF资料原装现货杜因特-114ic电子网

首页 >HRU13N10K>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HRU13N10K	文件：257.589 Kbytes Page：8 Pages	100V N-Channel Trench MOSFET	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HRU13N10K	文件：1.18927 Mbytes Page：4 Pages	N-Channel MOSFET uses advanced trench technology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
13N10	文件：773.51 Kbytes Page：6 Pages	N-Channel100-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
CEB13N10	文件：586.14 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB13N10	文件：354.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB13N10	文件：98.58 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB13N10L	文件：663.1 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB13N10L	文件：589.93 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=185mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP13N10	文件：586.14 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP13N10	文件：98.58 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP13N10L	文件：663.1 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP13N10L	文件：589.93 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=185mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
FQB13N10	文件：333.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB13N10	文件：628.83 Kbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB13N10L	文件：564.88 Kbytes Page：9 Pages	100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N10	文件：619.06 Kbytes Page：9 Pages	100VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N10	文件：269.39 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	TGS Tiger Electronic Co.,Ltd	TGS
FQD13N10	文件：1.37659 Mbytes Page：9 Pages	N-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N10	文件：867.56 Kbytes Page：8 Pages	N-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD13N10	文件：304.91 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

12 3 4 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市惊羽科技有限公司	HRU13N10K	SEMIHOW	24+25+/26+27+	TO-251-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市新力诚科技有限公司	HRU50N06K	Semihow	2020+	TO-251	46410	公司代理品牌,原装现货超低价清仓!	询价
艾睿国际（香港）有限公司	HRU50N06K	SEMIHOW	2021+	TO-251	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市国宇半导体科技有限公司	HRU50N06K	S	23+	TO-251	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	HRU50N06K	S	TO-251	22+	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	HRU50N06K	S	23+	TO-251	6000	原装正品，支持实单	询价
深圳市创新迹电子有限公司	HRU50N06K	SEMIHOW	23+	TO-251	6800	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	HRU50N06K	SEMIHOW	23+	TO-251	6800	专注配单,只做原装进口现货	询价
深圳赋能华科电子有限公司	HRU95NR1	HYNIS	22+	QFP	500	样品可出,优势库存欢迎实单	询价
深圳市英卓尔科技有限公司	HRU95NR1	HYNIS	20+	QFP	500	样品可出,优势库存欢迎实单	询价

更多HRU13N10K供应商更新时间2024-6-22 14:18:00

相关规格书

相关库存