HRF3205

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

HRF3205

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

HRF3205

isc N-Channel MOSFET Transistor

HRF3205

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs;

HRF3205S

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs; • 100A, 55V (See Note)\n• Low On-Resistance, rDS(ON) = 0.008Ω\n• Temperature Compensating PSPICE® Model\n• Thermal Impedance SPICE Model\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”;

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

HRF3205S

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

HRF3205S

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas