Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

Features • Low forward voltage drop and suitable for high effifiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly

文件：34.45 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Low Voltage High Speed Switching, Rectifying

Features • Low forward voltage drop and suitable for high efficiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly.

文件：86.13 Kbytes 页数：6 Pages

RENESAS

瑞萨

Diodes>Switching

Renesas

瑞萨

Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

Features • Low forward voltage drop and suitable for high effifiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly.

文件：34.76 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

文件：86.47 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：29.15 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司