IRFP2907ZPBF

HEXFETPowerMOSFET

VDSS=75V RDS(on)=4.5mΩ ID=90A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFP2907ZPBF

AdvancedProcessTechnology

JS2907

Rad-hard60V,0.6APNPtransistor

Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

JSR2907

Rad-hard60V,0.6APNPtransistor

Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

KMBT2907

PNPGeneralPurposeAmplifier

■Features ●CollectorCurrenttoContinuous:IC=-600mA ●PowerDissipation:PD=250mW

KMBT2907A

PNPTransistors

KMBT2907AT

PNPTransistors

■Features ●SmallPackage ●ComplementarytoMMBT2222AT

KN2907

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.);VCE=-30V,VEB=-0.5V. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.);IC=-150mA,IB=-15mA. •ComplementarytotheKN2222/2222A.

KN2907

TO-92PACKAGE

KN2907

EPITAXIALPLANARPNPTRANSISTOR