HOA0882数据手册传感器变送器的光学传感器-光电遮断器-槽型-晶体管输出规格书PDF

描述 Description

DESCRIPTION
The HOA088X/089X series consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black thermoplastic housing. Phototransistor switching takes place whenever an opaque object passes through the slot between emitter and detector. This series allows the user to choose from available options:
mounting tab configuration, (2) detector aperture size, (3) electro-optical characteristics, and (4) housing materials.
All devices employ a built-in strain relief for maximum wire attachment strength. The HOA088X series utilizes an IR transmissive polysulfone housing which features smooth optical faces without external aperture openings; this feature is desirable when aperture blockage from airborne contaminants is a possibility. The HOA089X series employs an opaque polysulfone housing with aperture openings for use in applications in which maximum rejection of ambient light is important and in situations where maximum position resolution is desired. The HOA088X/089X series employs plastic molded components. For additional component information see SEP8506 and SDP8406.FEATURES
• Phototransistor output
• Four mounting configurations
• Accurate position sensing
• 0.125 in.(3.18 mm) slot width
• Choice of detector aperture
• 24.0 in.(610 mm) min. 26 AWG UL 1429 wire leads
• Choice of opaque or IR transmissive housings

特性 Features

• Phototransistor output
• Four mounting configurations
• Accurate position sensing
• 0.125 in.(3.18 mm) slot width
• Choice of detector aperture
• 24.0 in.(610 mm) min. 26 AWG UL 1429 wire leads
• Choice of opaque or IR transmissive housings