HN58X24512I中文资料瑞萨数据手册PDF规格书

描述 Description

HN58X24512I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128-byte page programming function to make it’ s write operation faster.

特性 Features

• Single supply: 1.8 V to 5.5 V

• Two-wire serial interface (I2CTM serial bus*1)

• Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 5.5 V)

• Power dissipation:

 Standby: 3 µA (max)

 Active (Read): 2 mA (max)

 Active (Write): 5 mA (max)

• Automatic page write: 128-byte/page

• Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 5.5 V)

• Endurance: 105 Cycles (Page write mode)

• Data retention: 10 Years

• Small size packages: SOP-8pin (200 mil-wide)

• Shipping tape and reel: 1,500 IC/reel

• Temperature range: −40 to +85°C

• Lead free products.