HN58V66ATI-10数据手册Renesas中文资料规格书

描述 Description

Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

特性 Features

• Single supply: 2.7 to 5.5 V
• Access time:
- 100 ns (max) at 2.7 V ≤ VCC < 4.5 V
- 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V
• Power dissipation:
- Active: 20 mW/MHz (typ)
- Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (64 bytes): 10 ms (max)
• Ready/Busy
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin (only the HN58V66A series)
• Operating temperature range:
- HN58V65AI/HN58V66AI Series: −40 to +85°C
- HN58V65A-SR/HN58V66A-SR Series: −20 to +85°C
• There are also lead free products.