丝印：HMS80N10KA；Package：TO-252-2L；N-Channel Super Trench Power MOSFET

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HMSEMI

华之美半导体

HiPerFETTM MOSFET ISOPLUS220

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

HiPerFET Power MOSFETs

VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammabilit

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IXYS

艾赛斯