丝印：HMS7N65K；Package：TO-252；N-Channel Super Junction Power MOSFET ?

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650V N-Channel Planar MOSFET

Features RDSON≤ 1.4Ω @ Vgs=10 V, Id= 3.5A gate Charge(typical typical23 .05 nC) Crss (typical typical2.2pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PFC) (P

文件：2.26513 Mbytes 页数：12 Pages

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顺烨电子

650V N-Channel Planar MOSFET

Features RDSON≤ 1.4Ω @ Vgs=10 V, Id= 3.5A gate Charge(typical typical23 .05 nC) Crss (typical typical2.2pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PFC) (P

文件：2.26513 Mbytes 页数：12 Pages

SY

顺烨电子

650V N-Channel Planar MOSFET

Features RDSON≤ 1.4Ω @ Vgs=10 V, Id= 3.5A gate Charge(typical typical23 .05 nC) Crss (typical typical2.2pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PFC) (P

文件：2.26513 Mbytes 页数：12 Pages

SY

顺烨电子