HMS51232M4G-12中文资料HANBIT数据手册PDF规格书

GENERAL DESCRIPTION

The HSD4M64B4W is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD4M64B4W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD4M64B4W-10 : 100MHz (CL=2)

HSD4M64B4W-10L : 100MHz (CL=3)

HSD4M64B4W-12 : 125MHz (CL=3)

HSD4M64B4W-13 : 133MHz (CL=3)

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• The used device is 1M x 16bit x 4Banks SDRAM