IRFP462

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=17A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch

ISCN462N

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=500V(Min) ·Collector-EmitterSaturationVoltage- :VCE(sat)=1.0V(Max)@IC=10A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpoweramplifier,highspeedswitchinga

KF462B

SPECIFICATIONSFORSAWFILTER(BANDPASSFILTERSFOR400MHz~520MHzRANGE)

KF462BS

SPECIFICATIONSFORSAWFILTER(BANDPASSFILTERSFOR400MHz~520MHzRANGE)

KF462BV

SPECIFICATIONSFORSAWFILTER(BANDPASSFILTERSFOR400MHz~520MHzRANGE)

KP462

Polypropylenefilmfoilcapacitors

KP462

Polypropylenefilmfoilcapacitors

[Vishay] FEATURES •Suppliedlooseinbox,tapedonreelorunidirectional. •IntermediatevaluesareavailableoftheE96series. APPLICATIONS •Incircuitswhereclosetolerance,reliabilityandlowlossesareofprimeimportance,forexample:tunedcircuits,filterandtiming

LPAUN-462FWSLASHQ

PowerTransducerSeriesL-UNIT

LPFN-462M-A

PowerTransducerSeriesL-UNIT

LPFN-462M-ASLASHQ

PowerTransducerSeriesL-UNIT