500V N-Channel MOSFET

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HMSEMI

华之美半导体

MegaMOSFET

N-Channel Enhancement Mode Features International standard packages Low RDS (on)HDMOS™ process Rugged polysilicon gate cell structure Low package inductance (

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IXYS

艾赛斯

HiPerFET MOSFETs ISOPLUS220

Electrically Isolated Back Surface N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
Low drain to tab capacitance(

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.23Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电