5.0 or 3.3V, 1 Mbit (128 Kbit x 8) TIMEKEEPER NVSRAM

文件：315.84 Kbytes 页数：14 Pages

HANBIT

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 12.5Ω(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application

文件：524.9 Kbytes 页数：3 Pages

ISC

无锡固电

Darlington Transistor Array

Overview These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equipment because the specially designed 14-pin DIP makes suc

文件：76.69 Kbytes 页数：3 Pages

SANYO

三洋

3V Micropower Sampling 12-Bit A/D Converters in SO-8 Packages

文件：412.91 Kbytes 页数：24 Pages

LINER

凌力尔特