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HMN12816D

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

文件:143.7 Kbytes 页数:9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HMN12816D

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

文件:147.66 Kbytes 页数:9 Pages

HANBIT

HMN12816D-120

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

文件:147.66 Kbytes 页数:9 Pages

HANBIT

HMN12816D-120

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

文件:143.7 Kbytes 页数:9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HMN12816D-120I

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

文件:143.7 Kbytes 页数:9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HMN12816D-120I

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

文件:147.66 Kbytes 页数:9 Pages

HANBIT

HMN12816D-150

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

文件:143.7 Kbytes 页数:9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HMN12816D-150

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

文件:147.66 Kbytes 页数:9 Pages

HANBIT

HMN12816D-150I

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

文件:143.7 Kbytes 页数:9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HMN12816D-150I

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

文件:147.66 Kbytes 页数:9 Pages

HANBIT

详细参数

  • 型号:

    HMN12816D

  • 制造商:

    HANBIT

  • 制造商全称:

    Hanbit Electronics Co.,Ltd

  • 功能描述:

    Non-Volatile SRAM MODULE 2Mbit(128K x 16-Bit), 40pin-Dip, 5V

供应商型号品牌批号封装库存备注价格
HANBIT
2022+
DIP-36
49
原厂代理 终端免费提供样品
询价
HANBIT
20+
DIP-36
49
现货很近!原厂很远!只做原装
询价
HANBITTNI
2022+
49
全新原装 货期两周
询价
TE
25+
165
原厂现货渠道
询价
HANB
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HUAHONG/华虹
25+
54687
百分百原装现货 实单必成 欢迎询价
询价
HUAHONG GROUP(华虹挚芯)
22+
150000
Taiyo授权代理,自营现货
询价
HUAHONG GROUP(华虹挚芯)
23+
150000
原装正品现货,德为本,正为先,通天下!
询价
HANBIT
24+
MODULE-40
31
询价
HANBIT
05+
MODULE-40
31
原装现货海量库存欢迎咨询
询价
更多HMN12816D供应商 更新时间2025-12-8 10:09:00