HMC930A中文资料亚德诺数据手册PDF规格书

GENERAL DESCRIPTION

The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).

FEATURES

High output power for 1 dB compression (P1dB): 22 dBm

High saturated output power (PSAT): 24 dBm

High gain: 13 dB

High output third-order intercept (IP3): 33.5 dBm

Supply voltage: 10 V at 175 mA

50 Ω matched input/output

Die size: 2.82 mm × 1.50 mm × 0.1 mm

APPLICATIONS

Test instrumentation

Microwave radios and VSATs

Military and space

Telecommunications infrastructure

Fiber optics