2 GHz至18 GHz限幅放大器模块

HMC7891是一款限幅放大器，在2 GHz至18 GHz频段内工作，具有47 dB高增益。该放大器在-30 dBm至+10 dBm的输入功率范围内提供13 dBm饱和输出功率，限幅动态范围为40 dB。\n\n 由于饱和时具有高三次谐波输出电平，该放大器还可用作三倍频器。图14所示为三次谐波电平图，输入信号为2 GHz至6 GHz，输入驱动电平为10 dBm。\n\n 集成的稳压器提供偏置电压，采用8 V ± 1 V单直流电源供电，功耗为300 mA。\n\n HMC7891采用紧凑型模块化封装，带有可现场更换的SMA连接器。 • 高增益：47 dB \n\n• P1dB输出功率：10 dBm \n\n• 饱和输出功率(PSAT)：13 dBm \n\n• 限幅动态范围：最小值40 dB \n\n• 可现场更换的SMA连接器 \n\n• 工作温度：−40°C至+85°C;

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Field replaceable SMA connectors

文件：392.44 Kbytes 页数：12 Pages

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Package：模块；包装：托盘 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP RADAR 2GHZ-18GHZ MODULE

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100 V, Low IQ, Synchronous Step-Down Controller for GaN FETs

GENERAL DESCRIPTION The LTC7891 is a high performance, step-down, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from input voltages up to 100 V. The LTC7891 solves many of the challenges tradition

文件：1.75578 Mbytes 页数：36 Pages

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Low IQ, Dual, 2-Phase Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology fully Optimized for GaN FETs  Output Voltage up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V After Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supplies 

文件：1.0159 Mbytes 页数：50 Pages

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100 V, Low IQ, Synchronous Step-Down Controller for GaN FETs

GENERAL DESCRIPTION The LTC7891 is a high performance, step-down, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from input voltages up to 100 V. The LTC7891 solves many of the challenges tradition

文件：1.75578 Mbytes 页数：36 Pages

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