HMC-C054

RMS POWER DETECTOR 70 dB, 0.01 - 2 GHz

GeneralDescription TheHMC-C054PowerDetectorisdesignedforRFpowermeasurement,andcontrolapplicationsforfrequenciesupto2GHz.Thedetectorprovidesa“trueRMS”representationofanyRF/IFinputsignal.Theoutputisatemperaturecompensatedmonotonic,representationofrealsign

IB054S

Infinitesimalsurfacemountbridgerectifier

IB054S

Infinitesimalsurfacemountbridgerectifier

ICX054AK

1/3-inchCCDImageSensorforNTSCColorCamera

Description TheICX054AKisaninterlineCCDsolid-stateimagesensorsuitableforNTSC1/3-inchcolorvideocameras.HighsensitivityisachievedthroughtheadoptionofYe,Cy,MgandGcomplementarycolormosaicfiltersandHAD(Hole-AccumulationDiode)sensors. Thischipfeaturesafieldper

ICX054AL

1/3-inchCCDImageSensorforEIAB/WCamera

Description TheICX054ALisaninterlineCCDsolid-stateimagesensorsuitableforEIA1/3-inchB/Wvideocameras.HighsensitivityisachievedthroughtheadoptionofHAD(Hole-AccumulationDiode)sensors.Thischipfeaturesafieldperiodreadoutsystem,andanelectronicshutterwithvariable

ICX054BK

Diagonal6mm(Type1/3)CCDImageSensorforNTSCColorVideoCameras

Description TheICX054BKisaninterlineCCDsolid-stateimagesensorsuitableforNTSCcolorvideocameras.ComparedwiththecurrentproductICX054AK,sensitivityisimproveddrasticallythroughtheadoptionofSuperHADCCDtechnology.Ye,Cy,Mg,andGcomplementarycolormosaicfiltersareu

ICX054BL

Diagonal6mm(Type1/3)CCDImageSensorforEIAB/WVideoCameras

Description TheICX054BLisaninterlineCCDsolid-stateimagesensorsuitableforEIAB/Wvideocameras.ComparedwiththecurrentproductICX054AL,sensitivityisimproveddrasticallythroughtheadoptionofSuperHADCCDtechnology. Thischipfeaturesafieldperiodreadoutsystem,andanele

IIRFP054N

N-ChannelMOSFETTransistor

•DESCRITION •UltraLowOn-resistance •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤12mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRCP054

HEXFETPOWERMOSFET

IRF054

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

60V,N-CHANNEL TheHEXFET™technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior