GaAs HEMT MMIC LOW NOISE AMPLIFIER

General Description The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplifi er die which operates between 18 and 40 GHz. The amplifi er provides 9 dB of gain, 3.9 dB noise fi gure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a s

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GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz

General Description The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplifi er die which operates between 18 and 40 GHz. The amplifi er provides 9 dB of gain, 3.9 dB noise fi gure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a s

文件：244.54 Kbytes 页数：6 Pages

Hittite

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz

文件：250.95 Kbytes 页数：6 Pages

Hittite

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz

文件：250.95 Kbytes 页数：6 Pages

Hittite

低噪声放大器芯片，18 - 40 GHz

HMC-ALH445是一款GaAs MMIC HEMT自偏置宽带低噪声放大器芯片，工作频率范围为18至40 GHz。 该放大器提供9 dB增益、3.9 dB噪声系数（28 GHz）和+12 dBm输出功率（1 dB增益压缩），采用+5V单电源时功耗仅为45 mA。 由于尺寸较小，HMC-ALH445放大器适合集成到多芯片模块(MCM)中。 • 噪声系数：3.9 dB (28 GHz) \n\n• 增益：9 dB \n\n• P1dB输出功率：+12 dBm (28 GHz) \n\n• 电源电压：+5V (45 mA) \n\n• 裸片尺寸：1.6 x 1.6 x 0.1 mm;

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