PNP EPITAXIAL PLANAR TRANSISTOR

Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage (BVCEO=150V@ IC=1mA) • Complements to NPN Type HMBT5551

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HSMC

华昕

Transistors

H-BRIGHT

华晔

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

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SEMTECH

先之科

MDL,QUAD,1GD,1:1,SM,TY

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pulse

GIGABIT (10/100/1000 BASE-T QUAD- & DUAL-TRANSFORMER MODULES AND UNFILTERED CONNECTORS

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pulse