丝印：HM8N20A；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

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HMSEMI

华之美半导体

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：59.65 Kbytes 页数：7 Pages

PHI

PHI

N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS

文件：232.26 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxi

文件：38.9 Kbytes 页数：5 Pages

INTERSIL