R8008ANJFRG

Nch800V8APowerMOSFET

R8008ANX

10VDriveNchMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

R8008ANX

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=8A@TC=25℃ •DrainSourceVoltage-:VDSS=800V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=1.03Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariations

RFSW8008

Wi-FiSPDTSwitch300MHzto5925MHz

RFSW8008SB

Wi-FiSPDTSwitch300MHzto5925MHz

RFSW8008SQ

Wi-FiSPDTSwitch300MHzto5925MHz

RFSW8008SR

Wi-FiSPDTSwitch300MHzto5925MHz

RT8008

1.5MHz,600mA,HighEfficiencyPWMStep-DownDC/DCConverter

GeneralDescription TheRT8008isahigh-efficiencypulse-width-modulated(PWM)step-downDC-DCconverter.Capableofdelivering600mAoutputcurrentoverawideinputvoltagerangefrom2.5Vto5.5V,theRT8008isideallysuitedforportableelectronicdevicesthatarepoweredfrom1-cellLi-ion

RT8008GB

1.0V,1.2V,1.5V,1.8V,2.5Vand3.3VFixed/AdjustableOutputVoltage

GeneralDescription TheRT8008isahigh-efficiencypulse-width-modulated(PWM)step-downDC/DCconverter.Capableofdelivering600mAoutputcurrentoverawideinputvoltagerangefrom2.5Vto5.5V,theRT8008isideallysuitedforportableelectronicdevicesthatarepoweredfrom1-cellLi-i

RT8008GB

EvaluationBoard