4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi

文件：75.88 Kbytes 页数：16 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword 쨈 8-bit)

Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi

文件：100.64 Kbytes 页数：18 Pages

RENESAS

瑞萨

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi

文件：75.88 Kbytes 页数：16 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword 쨈 8-bit)

Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi

文件：100.64 Kbytes 页数：18 Pages

RENESAS

瑞萨