64k SRAM (8-kword x 8-bit) Wide Temperature Range version

Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting.

文件：72.32 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

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64 k SRAM (8-kword x 8-bit)

Description The Hitachi HM6264B is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, 300 mil plastic DIP, is available for h

文件：82.09 Kbytes 页数：15 Pages

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

文件：592.28 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

HITACHI

日立

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

文件：54.36 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

文件：592.28 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

文件：54.36 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

文件：54.36 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

文件：54.36 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

8192-word x 8-bit High Speed CMOS Static RAM

Features • Low-power standby — 0.1 mW (typ) — 10 µW (typ) L-/LL-version • Low power operation — 15 mW/MHz (typ) • Fast access time — l00/120/150 ns (max) • Single +5 V supply • Completely static memory — No clock or timing strobe required • Equal access and cycle tim

文件：54.36 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司