HM62256B

256k SRAM (32-kword x 8-bit)

Description TheHitachiHM62256BSeriesisaCMOSstaticRAMorganized32,768-word×8-bit.Itrealizeshigher performanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology.Thedevice,packagedin8×14mmTSOP,8×13.4mmTSOPwiththicknessof1.2mm,450milSOP

HM62256B

256k SRAM (32-kword x 8-bit);

HM62256BLFP-4SLT

32,768-word × 8-bit High Speed CMOS Static RAM; • High speed\n  Fast access time: 45/55/70/85 ns (max)\n• Low power\n  Standby: 1.0 µW (typ)\n  Operation: 25 mW (typ) (f = 1 MHz)\n• Single 5 V supply\n• Completely static memory\n  No clock or timing strobe required\n• Equal access and cycle times\n• Common data input and output\n  Three state output\n• Directly TTL compatible\n  All inputs and outputs\n• Capability of battery back up operation;

Description\nThe Hitachi HM62256B is a CMOS static RAM organized 32-kword ×8-bit. It realizes higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The device, packaged in 8 ×14 mm TSOP, 8 ×13.4 mm TSOP with thickness of 1.2 mm, 450-mil SOP (foot print pitch width), 600-mil plastic DIP, or 300-mil plastic DIP, is available for high density mounting. It offers low power standby power dissipation; therefore, it is suitable for battery back-up systems.

HM62256BLFP-5SLT

256k SRAM (32-kword × 8-bit); •  Single 5.0 V supply:  5.0 V ± 10%\n•  Access time: 55 ns/70 ns/85 ns (max)\n•  Power dissipation:\n Active:  25 mW (typ) (f = 1 MHz)\n Standby:  1.0 µW (typ)\n•  Completely static memory\n No clock or timing strobe required\n•  Equal access and cycle times\n•  Common data input and output\n Three state output\n•  Directly TTL compatible all inputs and outputs\n•  Battery backup operation;

Description\nThe Hitachi HM62256B Series is a CMOS static RAM organized 32,768-word × 8-bit. It realizes higher\nperformance and low power consumption by employing 0.8 µm Hi-CMOS process technology.  The device, packaged in 8 × 14 mm TSOP, 8 × 13.4 mm TSOP with thickness of 1.2 mm, 450 mil SOP (foot print pitch width), 600 mil plastic DIP, or 300 mil plastic DIP, is available for high density mounting.  It offers low power standby power dissipation; therefore, it is suitable for battery backup systems.

HM62256BLFP-5SLT

256k SRAM (32-kword x 8-bit)

Description TheHitachiHM62256BSeriesisaCMOSstaticRAMorganized32,768-word×8-bit.Itrealizeshigher performanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology.Thedevice,packagedin8×14mmTSOP,8×13.4mmTSOPwiththicknessof1.2mm,450milSOP

HM62256BLFP-7SLT

256k SRAM (32-kword x 8-bit)

Description TheHitachiHM62256BSeriesisaCMOSstaticRAMorganized32,768-word×8-bit.Itrealizeshigher performanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology.Thedevice,packagedin8×14mmTSOP,8×13.4mmTSOPwiththicknessof1.2mm,450milSOP

HM62256BLFP-7T

256k SRAM (32-kword x 8-bit)

Description TheHitachiHM62256BSeriesisaCMOSstaticRAMorganized32,768-word×8-bit.Itrealizeshigher performanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology.Thedevice,packagedin8×14mmTSOP,8×13.4mmTSOPwiththicknessof1.2mm,450milSOP

HM62256BLFP-7ULT

256k SRAM (32-kword x 8-bit)

Description TheHitachiHM62256BSeriesisaCMOSstaticRAMorganized32,768-word×8-bit.Itrealizeshigher performanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology.Thedevice,packagedin8×14mmTSOP,8×13.4mmTSOPwiththicknessof1.2mm,450milSOP

HM62256BLP-7

256k SRAM (32-kword x 8-bit)

Description TheHitachiHM62256BSeriesisaCMOSstaticRAMorganized32,768-word×8-bit.Itrealizeshigher performanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology.Thedevice,packagedin8×14mmTSOP,8×13.4mmTSOPwiththicknessof1.2mm,450milSOP

HM62256BLP-7SL

256k SRAM (32-kword x 8-bit)

Description TheHitachiHM62256BSeriesisaCMOSstaticRAMorganized32,768-word×8-bit.Itrealizeshigher performanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology.Thedevice,packagedin8×14mmTSOP,8×13.4mmTSOPwiththicknessof1.2mm,450milSOP