4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which require

文件：73.69 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and

文件：64.5 Kbytes 页数：14 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and

文件：64.5 Kbytes 页数：14 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and

文件：64.5 Kbytes 页数：14 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which require

文件：73.69 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which require

文件：73.69 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which require

文件：73.69 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which require

文件：73.69 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which require

文件：73.69 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (4-Mword x 1-bit)

Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which require

文件：73.69 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司