1,048,576-word X 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/B

文件：235.1 Kbytes 页数：27 Pages

HITACHIHitachi Semiconductor

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1,048,576-word X 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/B

文件：235.1 Kbytes 页数：27 Pages

HITACHIHitachi Semiconductor

日立日立公司

1,048,576-word X 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/B

文件：235.1 Kbytes 页数：27 Pages

HITACHIHitachi Semiconductor

日立日立公司

1,048,576-word X 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/B

文件：235.1 Kbytes 页数：27 Pages

HITACHIHitachi Semiconductor

日立日立公司

1,048,576-word × 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/BL, • Single 5 V (±10%)\n• High speed\n   — Access time\n      60 ns/70 ns/80 ns (max)\n• Low power dissipation\n   — Active mode\n      605 mW/550 mW/495 mW (max)\n   — Standby mode 11 mW (max)\n      0.55 mW (max) (L-version)\n• Fast page mode capability\n• 1024 refresh cycles : 16 ms\n   1024 ref;

HITACHI

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1,048,576-WORD x 4-BIT DYNAMIC RAM

HITACHI

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1,048,576-word X 4-bit Dynamic Random Access Memory

HITACHI

日立