HM5117805LTS-6中文资料尔必达数据手册PDF规格书

描述 Description

The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most

advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.

特性 Features

• Single 5 V (±10)

• Access time: 50 ns/60 ns/70 ns (max)

• Power dissipation

Active mode: 605 mW/550 mW/495 mW (max)

Standby mode : 11 mW (max)

: 0.83 mW (max) (L-version)

• EDO page mode capability

• Long refresh period

2048 refresh cycles : 32 ms

: 128 ms (L-version)

• 4 variations of refresh

 RAS-only refresh

 CAS-before-RAS refresh

 Hidden refresh

 Self refresh (L-version)

• Battery backup operation (L-version)