NPN EPITAXIAL PLANAR TRANSISTOR

Description This device is designed for use as general purpose amplifier and switching requiring collector currents 1A

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HSMC

华昕

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 3.0V(Max) @IC= 8A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

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ISC

无锡固电

N-Channel Enhancement Mode Power MOSFET

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LEIDITECH

雷卯电子

LEADLESS GLASS ZENER DIODES

DESCRIPTION This surface mountable zener diode seriesis similar to the 1N3016 thru 1N3051 JEDEC registrationin the DO-13 package except that it meets the surface mount DO-213AB outline. It is an ideal selection for applications of high density and low parasitic requirements. Due to its glass he

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MICROSEMI

美高森美