NPN EPITAXIAL PLANAR TRANSISTOR

Description This device is designed for use as general purpose amplifier and switching requiring collector currents 1A

文件：22.44 Kbytes 页数：2 Pages

HSMC

华昕

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 3.0V(Max) @IC= 8A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：288.73 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Power MOSFET

文件：315.73 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

LEADLESS GLASS ZENER DIODES

DESCRIPTION This surface mountable zener diode seriesis similar to the 1N3016 thru 1N3051 JEDEC registrationin the DO-13 package except that it meets the surface mount DO-213AB outline. It is an ideal selection for applications of high density and low parasitic requirements. Due to its glass he

文件：99.91 Kbytes 页数：2 Pages

Microsemi

美高森美