HM16N02D规格书库存现货华之美半导体HMSEMI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HM16N02D	文件：995.53 Kbytes Page：7 Pages	20V N-Channel Enhancement Mode MOSFET 文件：995.53 Kbytes 页数：7 Pages	HMSEMI 华之美半导体	HMSEMI
RFD16N02	文件：959.96 Kbytes Page：8 Pages	N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes 页数：8 Pages	VBSEMI 微碧半导体	VBSEMI
RFD16N02	文件：74.61 Kbytes Page：8 Pages	16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica 文件：74.61 Kbytes 页数：8 Pages	Intersil	Intersil
RFD16N02L	文件：74.61 Kbytes Page：8 Pages	16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica 文件：74.61 Kbytes 页数：8 Pages	Intersil	Intersil

更多HM16N02D供应商更新时间2025-10-6 14:01:00