TO-220 Plastic-Encapsulate Transistors

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HMSEMI

华之美半导体

高压开关三极管

HMsemi

华之美半导体

12 AMPERE NPN SILICON POWER TRANSISTOR

Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits. Specification Features • VCEO(sus)=400V • Reverse Bi

文件：57.85 Kbytes 页数：6 Pages

HSMC

华昕

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifier

文件：261.61 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A APPLICATIONS ·Switching ·Regulators ·Inverters ·Motor controls ·Solenoid/Relay drivers

文件：235.33 Kbytes 页数：2 Pages

ISC

无锡固电