1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

Intersil

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

文件：234.23 Kbytes 页数：9 Pages

Intersil

DIP

DAITO大东/FANUC发那科

上传：深圳市英博尔电子有限公司

SMD

pulse/普思

上传：深圳市勤思达科技有限公司