Circuit breaker, PowerPacT H, thermal magnetic, I-Line, 50A, 2 pole, 50 kA, 600 VAC, phase AC, 80 rated

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施耐德

Thermally-Enhanced High Power RF GaN on SiC HEMT

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科锐

Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz

Description The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced DFN SMD package. Features • GaN on SiC HEMT technology • T

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Circuit breaker, PowerPacT H, thermal magnetic, I-Line, 50A, 2 pole, 25 kA, 600 VAC, phase AC, 80 rated

文件：120.13 Kbytes 页数：2 Pages

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施耐德