InGaAsP Laser Diodes

Description The HL1326MF is a 1.3 µm InGaAsP Fabry Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptic communication systems and other applied optical equipment. It has high optical power with low drive current and wid

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HitachiHitachi Semiconductor

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InGaAsP Laser Diodes

HITACHI

日立

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 48A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch

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Micropower Precision Triple Supply Monitors

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Low Voltage Supervisorwith 27 Selectable Thresholds and Watchdog Timer

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