MAX6012BEUR-T

Precision,Low-Power,Low-Dropout,SOT23-3VoltageReferences

GeneralDescription TheMAX6012/MAX6021/MAX6025/MAX6030/MAX6041/MAX6045/MAX6050precision,low-dropout,micropowervoltagereferencesareavailableinminiatureSOT23-3surface-mountpackages.Theyfeatureaproprietarycurvature-correctioncircuitandlaser-trimmedthin-filmresistorsthatresul

MAXIM6012

PLASTICENCAPSULATEDDEVICES

DeviceDescription General TheMAX6100isalow-cost,low-dropout(LDO),micropowervoltagereferences.Thisthree-terminalreferencehasanoutputvoltageoptionof1.8V.Itfeaturesaproprietarycurvature-correctioncircuitandlaser-trimmed,thin-filmresistorsthatresultinalowtemperatu

MB6012

ProductSummaryPrototypingKits

OVERVIEW InordertosupportinitialdesignandprototypingactivitiesinvolvingMitelcomponents,anumberofancillarycomponentkitsareavailable.TheseincludethecomponentswhichareutilizedontheISDNEXPRESSfamilyofboardlevelproducts. Thesekitsareintendedforuseinsupporting

MJI6012

PowerTransistors

MSN6012F

650V(D-S)N-ChannelEnhancementModePowerMOSFET

MX6012GLN

12G-portDin-railLayer3fullGigabitManagedEthernetswitches

NAD-6012

60WOpenFrameDualOutput

[YCL] Feature: ●90to264Vacuniversalinputrange. ●Meet(Approval)UL/CUL,TUV. ●EMI/RFImeetVDE&FCClimitB. ●Lowcost&compactsize. ●60Wattsin127´76.2´36.5mmSize. ●2YearWarranty.

NCE6012AS

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6012ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=12A RDS(ON)

NCE6012CS

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6012CSusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=12A RDS(ON)

NR-6012

PleasereadthisnoticebeforeusingtheTAIYOYUDENproducts.

PleasereadthisnoticebeforeusingtheTAIYOYUDENproducts. SMDPOWERINDUCTORS(NRSERIES/NRSERIESHTYPE/STYPE/VTYPE)