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HI-5046A/883数据手册Renesas中文资料规格书

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厂商型号

HI-5046A/883

功能描述

DPDT CMOS Analog Switch

制造商

Renesas Renesas Technology Corp

中文名称

瑞萨 瑞萨科技有限公司

数据手册

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更新时间

2025-8-6 18:16:00

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HI-5046A/883规格书详情

描述 Description

This CMOS analog switch offers low-resistance switching performance for analog voltages up to the supply rails and for signal currents up to 70mA. “ON” resistance is low and stays reasonably constant over the full range of operating signal voltage and current. RON remains exceptionally constant for input voltages between +5V and -5V and currents up to 50mA. Switch impedance also changes very little over temperature, particularly between 0°C and +75°C. RON is nominally 25Ω for the HI-5046A/883. This device provides break-before-make switching and is TTL and CMOS compatible for maximum application versatility. Performance is further enhanced by Dielectric Isolation processing which insures latch-free operation with very low input and output leakage currents (0. 8nA at +25°C). The HI-5046A/883 also features very low power operation (1. 5mW at +25°C). The HI-5046A/883 is available in a 16 Ld CerDIP package and is specified over the temperature range of -55°C to +125°C.

特性 Features

• This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Wide Analog Signal Range . . . . . . . . . . . . . . . . . . ±15V
• Low \"On\" Resistance . . . . . . . . . . 25Ω (Typ), 50Ω (Max)
• High Current Capability . . . . . . . . . . . . . . . . 70mA (Max)
• Break-Before-Make Switching
• Turn-On Time. . . . . . . . . . . . .370ns (Typ), 800ns (Max)
• Turn-Off Time . . . . . . . . . . . . 280ns (Typ), 400ns (Max)
• No Latch Up
• Input MOS Gates are Protected from Electrostatic Discharge
• DTL, TTL, CMOS, PMOS Compatible

应用 Application

• High Frequency Analog
• Sample and Hold
• Digital Filters
• Operational Amplifier Gain Switching

技术参数

  • 制造商编号

    :HI-5046A/883

  • 生产厂家

    :Renesas

  • Type of Switch

    :DPDT

  • Configuration

    :NO

  • Switches (#)

    :1

  • RDS (ON) (Ohms)

    :25

  • IS (mA)

    :0.1

  • Leakage (nA)

    :0.8

  • Source Cap (pf)

    :11

  • TON (ns)

    :370

  • TOFF (ns)

    :280

  • Charge Injection (pC)

    :50

  • Drain Capacitance

    :11 pF

  • Advanced Features

    :Low RON

  • Qualification Level

    :QML Class Q (military)

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