BZX585-C33

Marking：HH；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:≤40W •Totalpowerdissipation:≤300mW •Wideworkingvoltagerange:no

BZX585-C33

Marking：HH；Package：SOD523；Voltage regulator diodes

Featuresandbenefits Non-repetitivepeakreversepower dissipation:40W Totalpowerdissipation:300mW AEC-Q101qualified Wideworkingvoltagerange:nominal 2.4Vto75V(E24range) Twotoleranceseries:2and5 Lowdifferentialresistance

D3V3L1B2LP3Q-7

Marking：HH；Package：X3-DFN0603-2；LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV 1ChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDIODES™D3V3L1B2LP3Qiss

D3V3Z1BD2CSP-7

Marking：HH；Package：X2-DSN0603-2；LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features ProvideTransientProtectionforTheProtectedLinetoIEC61000-4-2(ESD)Air±20kV,Contact±20VIEC61000-4-5(surge)10.5A(8/20μs) BidirectionalESDProtectionofOneLine ExtremelyLowCapacitanceCd=0.3pF ExtremelyLowClampingVoltagetoProtectSensitiveI/Os Low

MMBZ16VTAL-Q

Marking：HH；Package：SOT23；High surge current unidirectional double ESD protection diodes

1.Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinacommonanode configuration,encapsulatedinaSOT23(TO-236AB)smallSurface-MountedDevice(SMD)plastic package.ThedeviceisdesignedforESDandtransientovervoltageprotectionofuptotwos

NC7SZ32FHX

Marking：HH；Package：UDFN6；TinyLogic UHS Two-Input OR Gate

Description TheNC7SZ32isasingletwo−inputORgatefromonsemi’s Ultra−HighSpeed(UHS)seriesofTinyLogic.Thedeviceisfabricated withadvancedCMOStechnologytoachieveultra−highspeedwith highoutputdrivewhilemaintaininglowstaticpowerdissipationover abroadVCCoperatingr

NC7SZ32L6X

Marking：HH；Package：SIP6；TinyLogic UHS Two-Input OR Gate

Description TheNC7SZ32isasingletwo−inputORgatefromonsemi’s Ultra−HighSpeed(UHS)seriesofTinyLogic.Thedeviceisfabricated withadvancedCMOStechnologytoachieveultra−highspeedwith highoutputdrivewhilemaintaininglowstaticpowerdissipationover abroadVCCoperatingr

NC7SZ32L6X-L22175

Marking：HH；Package：SIP6；TinyLogic UHS Two-Input OR Gate

Description TheNC7SZ32isasingletwo−inputORgatefromonsemi’s Ultra−HighSpeed(UHS)seriesofTinyLogic.Thedeviceisfabricated withadvancedCMOStechnologytoachieveultra−highspeedwith highoutputdrivewhilemaintaininglowstaticpowerdissipationover abroadVCCoperatingr

P4SMAJ6.5

Marking：HH；Package：SMA；400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 400WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

PMV30XPA

Marking：HH；Package：SOT23；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •ExtendedtemperaturerangeTj=175°C •TrenchMOSFET